HomeIndustry news 600V GaN Transistor in TO-247

600V GaN Transistor in TO-247

March 23, 2015 By admin Comments are Off , , ,

Transphorm Inc. is now offering engineering samples of its TPH3205WS transistor, the first 600V GaN transistor in a TO-247 package. Offering 63 mOhm R(on) and 34A ratings, the device utilizes the company’s Quiet Tab™ source-tab connection design, which reduces EMI at high dv/dt to enable low switching loss and high-speed operation in power supply and inverter applications. This new device extends Transphorm’s EZ-GaN™ product portfolio to now support PV inverter designs with power levels ranging from a few 100 watts (micro-inverters) to several kilowatts (residential central inverters).

Recommended: GaN Transistors rated for 600V handle up to 15A

This newest device continues the company’s achievement in this area with an R(on) increase under switching of only 5% at 400V, compared to other competitively rated devices with an almost 90% increase. Additionally, Transphorm will display a static demo of the TPH3205WS used in a 3kW inverter showing test results at 100 kHz and a peak efficiency of 98.8%, and over 99% at 50 kHz.

Over the last several years, GaN semiconductors have emerged as a leading technology enabler for the next wave of compact, energy-efficient power conversion systems – ranging from ultra-small adapters, high-power-density PCs, server and telecom power supplies, to highly efficient PV inverters and motion control systems. “Transphorm’s increased market footprint with this new higher-current GaN product, along with its access to high-quality, high-scale foundry manufacturing, enables us to meet growing demand from global customers,” said Primit Parikh, Transphorm’s President and Co-Founder. Engineering samples of the TPH3205WS are available now from stock and production release is scheduled at the end of June.
 
source: http://www.powerpulse.net/story.php?storyID=31841

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