Diodes Inc. has unveiled what it boasts as the world’s smallest 60V N-channel power MOSFET with a sub-100mΩ on-resistance. With a footprint measuring 1.6mm x 1.6mm and a typical height of 0.5mm, the DFN1616-packaged DMN6070SFCL helps achieve higher power densities in space-critical products such as cellphones, ultra-thin LCD TVs and hand-held gaming controls, stated the company.
With its very low on-resistance of only 74mΩ typical at a VGS of 4V, the MOSFET also helps to minimise conduction losses and raise overall power efficiency. The DMN6070SFCL handles a continuous current of 2A and supports a pulsed current of 10A, enabling it to cope well with DC-DC conversion spikes.
The miniature MOSFET is just one of a series of 60V N- and P-channel devices announced by Diodes to meet the needs of load switch, DC-DC conversion and signal switching duties. Four larger package options are also offered: SO8, SOT23, SOT223 and TO252, suiting a wide range of applications including consumer electronics, industrial controls and HVAC equipment.
source: http://www.ednasia.com/ART_8800518066_1000003_NP_647313a0.HTM
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