Mitsubishi Electric Corporation has developed a new J-Series transfer molded power semiconductor module (T-PM) mainly for motor drive applications in electric and hybrid vehicles. This new series is a compact power semiconductor module, the newest addition to Mitsubishi Electric’s J-Series T-PMs mainly for electric and hybrid vehicle motor drive applications. The new module is expected to contribute to further compactness, weight reduction and reduced power consumption in inverters for electric and hybrid vehicles.
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Product Features include the following: 1) Reduced inverter size and weight achieved through the extra compact package with high integration – The compact power semiconductor module features a highly integrated sixth-generation IGBT with a carrier-stored trench-gate bipolar transistor (CSTBTTM) structure and high-thermal conductivity isolation sheet in a transfer molded package. And realizes compact EV/HEV inverter designs by achieving 36% smaller footprint and 42% lighter weight compared with the existing J-Series CT300DJH060 automotive power semiconductor module.
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3) Automotive-grade high quality – Features transfer molded structure and Mitsubishi Electric’s original direct lead bonding (DLB) structure. – Power-cycle and temperature-cycle life spans are 30 times longer than those of typical industrial power semiconductor modules. The power-cycle lifespan is based on repetitive operational tests with the chip energized and the temperature rapidly changed within a range of 50 and 100 degrees C. The temperature cycle lifespan is based on repetitive operational tests with the temperature modulated between -40 and 125 degrees C without the chip being energized. – DLB structure reduces wiring resistance and inductance. – Traceability system enables management of materials and components, as well as the entire production process for each unit. – Completely lead-free, including the terminal plating.
source: http://www.powerpulse.net/story.php?storyID=31666
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