Cree‘s silicon-carbide (SiC) technology continues to enable smaller, lighter, more-efficient and lower-cost power systems with a new all-SiC 300-A, 1.2-kV half-bridge module. Packaged in industry-standard 62-mm housing, the new module reduces energy loss due to switching by more than five times compared to the equivalent silicon solution. This new module supports the design of all-SiC power converters in the MW class.
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“The drop-in feature of Cree’s new all-SiC power module allows us to achieve 99 percent efficiency while reducing the power module count by a factor of 2.5 in our existing HF induction heating systems,” stated John K. Langelid, R&D manager, EFD Induction.
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| Parameter | Cree CAS300M12BM2 |
Typical Competitor 300-A Si Module |
Comparison |
| Devices | All-SiC MOSFET + JBS | Si IGBT + Si PiN | SiC unipolar vs. Si bipolar |
| V(BR)DSS | 1.2 kV | 1.2 kV | Same |
| VDS(ON) or VCE(SAT) ID = 150 A @ 150°C |
1.3 V | 1.5 V | 13% lower |
| ESW(TOTAL) @ 150°C | 12 mJ | 66 mJ | 5.5x lower |
| QRR @ 150°C | 3.2 µC | 54 µC | 18x lower |
The latest Cree® SiC power module is available with multiple gate driver options and is pin compatible to standard 62mm half-bridge modules, including IGBT modules rated at 450A or more. This allows designers to quickly and easily evaluate the module’s unparalleled capabilities. The CGD15HB62P is a Cree designed isolated half-bridge gate driver optimized for SiC. It provides a direct mount low-impedance connection to Cree’s new 300A module and includes short circuit protection and under voltage protection. It is available for purchase at Cree distribution partners. Schematic and gerber files are available upon request.
source: http://www.powerpulse.net/story.php?storyID=32893
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