Anvil Semiconductors Ltd. has secured a production source for its proprietary 3C-SiC on silicon epiwafers with commercial SiC wafer and epitaxy supplier Norstel AB. Anvil’s novel process for the growth of device quality 3C-SiC epilayers on silicon wafers has been successfully transferred onto production reactors at Norstel’s state-of-the-art facilities in Norrkoping, Sweden. Wafers grown using Anvil’s patented stress-control techniques support the fabrication of 650V and 1200V devices.
Anvil is currently developing vertical SBDs and MOSFETs on its 3C-SiC on silicon wafers for supply and license to the multi-billion-dollar power electronics market. The use of silicon substrates and epitaxial growth of cubic silicon carbide enables fabrication of devices with the performance and efficiency benefits of SiC but at significantly lower material and manufacturing costs, a key target for the power electronics industry.
Jill Shaw, CEO of Anvil Semiconductors commented: “I’m delighted with this development. Getting the process onto production equipment at Norstel underlines the capabilities of our technology. It opens the way for the use of multi-wafer reactors for our future production needs and a move to 150mm diameter wafers.”
Ronald Vogel, CCO of Norstel AB added: “We are delighted that our proven high quality production expertise and capabilities in SiC epitaxy have helped Anvil to demonstrate the viability of their 3C-SiC solution and that Norstel’s manufacturing capacity will pave the way for Anvil’s volume production”.
source: http://www.powerpulse.net/story.php?storyID=30674
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