HomeIndustry news Depletion-Mode SOT FETs Rated from 60V to 800V

Depletion-Mode SOT FETs Rated from 60V to 800V

February 7, 2015 By admin Comments are Off , , , ,

IXYS Integrated Circuits Division (ICD), Inc., a wholly owned subsidiary of IXYS Corporation announced the expansion of its depletion-mode MOSFET family, with voltage ratings from 60V to 800V, and low maximum gate-to-source threshold voltages from -2.9V to -3.9V, which means that with ‘zero’ gate voltage the devices are on. These MOSFET devices are offered in SOT-89, SOT-223, and SOT-23 packages.

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IXYS ICD N-channel depletion-mode MOSFETs utilize a third-generation vertical DMOS process that results in high-voltage performance in an economical silicon gate process. The vertical DMOS process yields a robust device with high input impedance for efficient power management applications that is normally on. These highly reliable MOSFET devices have been widely used in IXYS ICD’s extensive solid state relays that have been successfully deployed in demanding industrial, LED lighting, aerospace, consumer, automotive and telecommunications applications.

Being ‘normally on,’ FETs enable these devices to conduct current without any gate voltage which makes them effective in power start up circuitry, in emergency lighting and backup power control applications, where gate power is lost. Furthermore, the unique characteristics of the devices enable them to be ideal current sources with the proper corresponding gate voltage bias, and even expand their function as dynamic current limiting devices.

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Typical applications include but are not limited to: voltage pre-regulator circuits, cold start voltage feed, current sources, constant current loads, LED drive circuits, IGBT speed enhancement, normally-on switches, ignition modules, converters and power supplies.

source: http://www.powerpulse.net/story.php?storyID=31556

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