Low-Profile Photocouplers feature 2.3mm Heights

Toshiba Corporation‘s Semiconductor & Storage Products Company today announced the launch of a low-input current drive transistor output photocoupler in a low-height SO6L package, which can be used to replace conventional DIP4 pin package products. Also today, Toshiba announced the launch of a photocoupler that combine 15Mbps high-speed communication with low power consumption. The TLP2761 also guarantees a creepage and clearance distance of 8mm. Both devices are available for immediate shipment.

Recommended: EPC eGaN Power Transistors Break Silicon Cost-Speed Barriers

The TLP383 incorporate Toshiba’s original high output infrared LEDs and guarantee the same CTR (Current Transfer Ratio) at 0.5mA input current and at 5.0mA input current. The new photocoupler has a low height of 2.3mm (max), an approximately 45% reduction from Toshiba conventional DIP4 package products. At the same time, the new product has an isolation specification equivalent to DIP4 wide lead type package products and guarantees a creepage and clearance distance of 8mm (min), and isolation voltage of 5000Vrms (min). With its low height, the TLP383 can be used in situations where there are strict height restrictions, such as on motherboards, and contribute to the development of smaller sets. It can be used for applications including inverter interfaces and general-purpose power supplies.

The TLP2761 photocoupler has a low height of 2.3mm (max), an approximately 45% reduction from conventional SDIP package products, and contribute to the development of thinner and smaller sets. Despite the low height, the new product guarantees a creepage and clearance distance of 8mm (min), and isolation voltage of 5000Vrms (min), making it suitable for applications requiring higher isolation specifications.

Related: 60W External LED Supplies for North America

The TLP2761 incorporate Toshiba’s original high output infrared LEDs in the input side and reduces the threshold input current by approximately 54% compared with Toshiba conventional products. In the output side, it contains a photo detector IC die fabricated with a Bi-CMOS process, and reduces the supply current by approximately 66% compared with conventional products. Furthermore, it can contribute to lowering the operation voltage of sets with guaranteed supply voltage of 2.7V to 5.5V, at temperatures up to 125 degrees Celsius, the industry’s highest class of operation.

Key specifications of the TLP2761 include: 2.3mm height SO6L package; Creepage/Clearance distance: 8mm (min.); Low threshold input current: 1.6 mA (max), 6mW (typ.); Low supply current: 1.0 mA (max), 2.1mW (typ.); Supply voltage: 2.7 to 5.5 V; Operation temperature: 125 degrees Celsius (max). Applications are expected to include motor drive inverters, photovoltaic inverters, servo amps, FA network devices and I/O interface applications.

source: http://www.powerpulse.net/story.php?storyID=32090

Comments are closed.