Toshiba Corporation‘s Semiconductor and Storage Products Company today announced the launch of a new surface-mount package series in its line-up of low-voltage MOSFET products that use dual-sided cooling to improve heat dissipation. The shipment of the 4 new products in the “DSOP Advance package” series starts immediately.
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The new devices have a heat sink on both sides of the package to improve heat dissipation, making it possible to realize high-current operations in compact packages. The new MOSFETs share the same 5mm x 6mm footprint as Toshiba’s current SOP Advance package, facilitating replacement without any need to modify existing PCB layouts. Applications are expected to include switching power supplies for servers and mobile devices, and so on.
The new line-up includes: TPWR8503NL, 30VDDS, ±20VGSS, RDS(on) 0.72mΩ typical for VGS = 10V / 0.85mΩ maximum for VGS = 10V / 1.0 mΩ typical for VGS = 4.5V / 1.3mΩ maximum for VGS = 4.5V, Ciss = 5300pF typical, Crss = 130pF typical, Coss = 2700pF typical, rg = 1.2Ω typical, and Qg (10V) = 74nC typical; TPWR8004PL, 40VDDS, ±20VGSS, RDS(on) 0.65mΩ typical for VGS = 10V / 0.8mΩ maximum for VGS = 10V / 0.95 mΩ typical for VGS = 4.5V / 1.35mΩ maximum for VGS = 4.5V, Ciss = 7370pF typical, Crss = 58pF typical, Coss = 1930pF typical, rg = 0.6Ω typical, and Qg (10V) = 103nC typical; TPW4R008NH, 80VDDS, ±20VGSS, RDS(on) 3.3mΩ typical for VGS = 10V / 4.0mΩ maximum for VGS = 10V, Ciss = 4100pF typical, Crss = 32pF typical, Coss = 890pF typical, rg = 1.2Ω typical, and Qg (10V) = 59nC typical; TPW4R50ANH, 100VDDS, ±20VGSS, RDS(on) 3.7mΩ typical for VGS = 10V / 4.5mΩ maximum for VGS = 10V, Ciss = 4000pF typical, Crss = 31pF typical, Coss = 700pF typical, rg = 1.0Ω typical, and Qg (10V) = 58nC typical.
source: http://www.powerpulse.net/story.php?storyID=31711
