MOSFETs designed for extreme temperatures

 X-REL Semiconductor has introduced two mid-power P-channel and two small-signal P- and N-channel transistors as the latest members of its XTR2N family of high-temperature MOSFETs. According to the company, the devices are aimed at high-reliability, extreme temperature and extended lifetime applications.

The mid-power P-channel transistors are divided into two families depending upon the maximum operating voltage. The XTR2N0325 and XTR2N0350 are intended for a maximum operation drain-source voltage of -30V, whereas XTR2N0525 and XTR2N0550 can sustain drain-source voltages of up to -50V. In each sub-family, two different transistor sizes, “25” and “50”, are available providing two possible maximum drain currents.

The small signal transistors released are the XTR2N0307 30V P-channel MOSFET, and the XTR2N0807 80V N-channel MOSFET. The XTR2N0307 small signal 30V P-channel has an on-state resistance at 230°C of 7Ω, whereas that of the XTR2N0807 small signal 80V N-channel is 9.1Ω, with respective continuous drain currents of 350mA (900mA peak) and 200mA (450mA peak).

The devices are able to reliably operate well below and above the -60°C to 230°C (five years at 230°C) temperature range. The expected lifetime of X-REL Semiconductor parts in a driver application operating at Tj=150°C is more than 35 years. 

source: http://www.ednasia.com/SEARCH/ART/X~%40~REL+Semiconductor.HTM

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