The result is greater than a 10 fold improvement in LED efficiency compared the first p-GaN demonstration data published by the company in December 2012, when the same measuring methodology is applied.
The performance upgrade was achieved by making improvements in addressing the ‘interface challenge’, a key technical hurdle that has been limiting the p-GaN performance demonstration in the past.
The improvements are the result of the enhanced plasma system in combination with new process steps which are now yielding continuing performance improvements.
BluGlass Chief Technology Officer, Dr. Ian Mann said: “The RPCVD p-GaN based LED performance in the last month has undergone a step change improvement. This has been achieved by focusing on two key aspects – the process steps for initiating the RPCVD p-GaN growth; and in finalising the last layers grown by MOCVD – in effect, making sure the RPCVD and MOCVD steps are compatible. Following these recent developments, we are confident that the team is on the right path to demonstrate that low temperature RPCVD can enhance the performance of LEDs fabricated solely by MOCVD today.”
BluGlass is aiming to demonstrate to the industry that an RPCVD top layer (the p-GaN layers) can improve the light output of an LED.
Additionally, the next generation RPCVD System, the BLG-300, is nearing completion and is expected to be growing GaN later this month. This ex-production scale system is a significantly larger system than the current R&D workhorse and will effectively double BluGlass’ research and development capacity. Having multiple RPCVD systems will greatly enhance the team’s capability to address the LED milestones, the scaling of the technology towards 8-inch wafer deposition and the potential performance advantages of a low temperature CVD process for GaN on silicon.
Source: http://www.electronics-eetimes.com/en/rpcvd-p-gan-offers-10-fold-improvement-in-led-efficiency.html?cmp_id=7&news_id=222921710&vID=209
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