Toshiba America Electronic Components, Inc. (TAEC) announced the launch of its 40V power MOSFET U-MOS IX-H series. This family of low-voltage, ultra-efficient trench MOSFETs is based on Toshiba’s next generation U-MOS IX-H semiconductor process. The U-MOS IX-H process realizes the lowest ON-resistance in the industry, compared to Toshiba’s conventional U-MOS VI-H series. The new MOSFETs also realize a low Qoss, for increased efficiency in switching-mode power supplies, including servers and telecom base stations, dc-dc converters, synchronous rectification and other power management circuitry where low-power operation, high-speed switching and minimum PCB real estate are needed.
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The first device in the series – a 40V version – has a typical RDS(ON) of only 0.7mΩ (max 0.85mΩ) and a typical output capacitance (Coss) of 1930pF. Rated for 40V, the TPHR8504PL is supplied in an ultra-miniature SOP-Advance package measuring just 5mm x 6mm. A current rating of 150A contributes to reliability. The UMOS IX-H series will be extended in the coming months with devices offering ratings of 30V to 60V.
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