Mitsubishi Electric Corp. was demonstrating a 600V three-phase bridge driver HVIC and a 1200V HVIC with desaturation detection during this week’s Techno Frontier in Tokyo. The 600V device is intended for use in consumer appliances and industrial machinery that are increasingly using variable-frequency inverters in their motor control systems to save energy and improve performance. Features include: Smallest size in the industry enables compact product design, the IC chip, which includes a three-phase bridge driver circuit and a short-current detection circuit, uses Mitsubishi Electric’s unique technologies to achieve an industry-smallest SSOP-24 package with a divided reduced surface fields (RESURF) structure. It is 56% smaller IC mount area compared to conventional products.
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In addition, this chip includes built-in short-circuit detector that immediately shuts down the power semiconductors in the event of a short circuit, preventing thermal destruction and ensuring reliability. And it enables a simple inverter system design using a built-in fault signal output including built-in failure output for detecting short circuits and low voltage and a timer function capable of suitable failure-output pulse width for each system by selecting the capacitor on the system board.
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Variable frequency inverters are being used increasingly in motor control systems of consumer appliances and industrial machinery to save energy and improve performance, so demand is growing for HVICs that drive power semiconductors in inverter systems. In particular, AC 400V inverter systems prevalent in Europe and certain other markets require high-voltage HVICs, so Mitsubishi Electric will now meet this demand with its new, high-reliability 1,200V HVIC, which boasts desaturation detection embedded with 1,200V P-channel MOSFET. Desaturation detection prevents thermal destruction of power semiconductors due to overcurrent. Fault protection using desaturation detection is more suitable for power modules from 150A than using a shunt resistor.
Product features include: Desaturation detection for reduced power loss reduction in power semiconductors, P-side and N-side desaturation detection prevents overcurrent thermal destruction of power semiconductors using 1,200V P-channel MOSFET. And HVIC directly detects shorts and earth faults in power semiconductors on P-side and transmits fault signals to N-side, shutting down systems. This contributes to power loss reduction in power semiconductors.
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This HVIC uses a 1,200V divided reduced surface fields (RESURF) structure for an optimized surface. The structure prevents electric field concentration at the p-n junction, realizing low current leakage of a maximum 10μA. Polycrystalline silicon resistor field plate (PolyRFP) structure of chip surface greatly enhances durability. And results in a high tolerance to switching noise helps achieve highly reliable inverter systems and high latch-up immunity (parasitic Vertical -PNP transistor action) realized with chip’s low-impedance buried layers.
source: http://www.powerpulse.net/story.php?storyID=32272
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