Vishay Intertechnology, Inc. today introduced the first two devices in its new 600V EF Series of fast body diode n-channel power MOSFETs. With low reverse recovery charge and on-resistance, the Vishay Siliconix SiHx28N60EF and SiHx33N60EF increase reliability and save energy in industrial, telecom, computing, and renewable energy applications. Built on second-generation Super Junction Technology, the 600 V fast body diode MOSFETs released today provide a complement to Vishay’s existing standard E Series components, expanding the company’s offering to devices that can be used in zero voltage switching (ZVS)/soft switching topologies such as phase-shifted bridges and LLC converter half bridges.
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The SiHx28N60EF and SiHx33N60EF increase reliability in these applications by offering a 10x lower reverse recovery charge (Qrr) than standard MOSFETs. This allows the devices to regain the ability to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress. In addition, the reduced Qrr results in lower reverse recovery losses compared with standard MOSFETs.
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The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100 % UIS testing. The MOSFETs are RoHS-compliant and halogen-free. Samples of the new EF Series MOSFETs are available now. Production quantities will be available in Q1 2015, with lead times of 16 weeks for large orders. Pricing for U.S. delivery only starts at $5.06 in 1,000-piece quantities.
source: http://www.powerpulse.net/story.php?storyID=31233
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