International Rectifier Corp. (IR) today introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 (Gen8) 1200V IGBT platform utilizes IR’s latest generation trench gate field stop technology delivered in industry standard TO-247 packages to offer best-in-class performance for industrial and energy saving applications. The novel Gen8 devices are available with current ratings from 8A up to 60A with typical VCE(ON) of 1.7V and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and superior robustness.
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“With the development of this new benchmark technology and state-of-the-art IGBT silicon platform, IR underlines its decades of commitment to the advancement of power electronics technology. Our goal is to achieve 100 percent inverterization of all electric motors for a more efficient use of electric energy and a greener environment,” said Alberto Guerra, Vice President Strategic Marketing, IR’s Energy Saving Products Business Unit.
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“IR’s Gen8 IGBT platform offers a superior technology targeting industrial applications. With best-in-class VCE(ON), robustness and excellent switching characteristics, this IGBT platform has been specifically tailored to achieve the demanding challenges of the industrial market,” said Llewellyn Vaughan-Edmunds, Senior Product Marketing Manager, IR’s Energy Saving Products Business Unit.
Pricing for the IRG8P08120KD begins at US $3.05 in 10,000-unit quantities. Production orders are available immediately.
source: http://www.powerpulse.net/story.php?storyID=31082
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