HomeIndustry news VisIC Announces 650V Normally-Off GaN Switch

VisIC Announces 650V Normally-Off GaN Switch

May 8, 2015 By admin Comments are Off , , , ,

VisIC Technologies, Ltd. announced their first normally-off GaN power switch. Using VisIC’s gallium nitride power transistors, the ALL-Switch (Advanced Low-Loss Switch) is expected to provide the fastest power-switching devices available amongst all low-resistance switching components. ALL-Switch will be used in a range of customer applications including photovoltaic inverters, UPS, hybrid electric vehicles/electric vehicles and high voltage dc-dc conversion.

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Tamara Baksht (PhD), CEO and founder of VisIC Technologies, said: “We are very excited to soon be able to sample our products to OEMs. With the combinations of our technology and the cost of GaN on Si, we see ourselves able to meet our goal to deliver GaN performance to OEMs at Silicon MOSFET prices. This is the long awaited “game-changer” for GaN in power conversion devices. Delivering this promise to the very large 650V applications space will rapidly expand the use of GaN-based components since GaN also provides the efficiency gains, cost reductions and size reductions OEMs want to deliver to their customers in systems currently using Silicon IGBTs and MOSFETs.”

VisIC’s core technology is based the un-doped normally-off gallium nitride (GaN) structure implemented currently on the GaN-on-SiC semiconductor technology. VisIC’s developments are further applicable to GaN-on-Si as well. Unlike silicon (Si) and gallium arsenide (GaAs), GaN, as a wide band-gap material, exhibits superior advantages in all power applications across the switching frequencies from several Hz to hundreds of GHz. This technology was further proven to be superior over other wide band-gap semiconductors, such as pure SiC, by minimizing switching losses and fabrication costs.

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VisIC’s normally-off GaN MOSHEMT exhibits a unique set of performances as: Low leakage with Ion/Ioff ratio above 1E6; Low parasitic capacitances due to undoped epitaxial design; Low specific On resistance which is less than 0.2 Ohm*mm sqr; High blocking voltage that is above 600V; Low cost technology compatible with existing GaN RF and Si CMOS production lines.

Based on this same developed technology, VisIC can further manufacture and embed Schottky diodes and normally-on devices on a single die, thus offering the customer a complete GaN power integrated circuit platform. VisIC has further developed a unique device layout sharing a Si-based simplified interconnect technology allowing further size reduction of the chip and manufacture costs.

source: http://www.powerpulse.net/story.php?storyID=32154

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