Toshiba Semiconductor has launched a high – current 4500V, 1200A power module for use in rail traction, industrial motor control, renewable energy systems and electricity transmission and distribution applications. The MG1200GXH1US61 PMI (plastic case module IEGT) integrates an N-channel IEGT (injection-enhanced gate transistor) and a fast recovery diode (FRD) into a standard package with a footprint of just 140mm x 190mm.
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Designed to be used at much higher currents in the 4500V module class, the new module will also save energy, space and weight in high-power switching converter/inverter and motor control designs.
The MG1200GXH1SU61 offers an isolation voltage rating of 6000 Vac (rms for one minute) and can handle a peak turn-off collector current of 2400A. Collector power dissipation (at 25 degrees C) is 4000W. An operating temperature range of -40 to +150 degrees C ensures compatibility with the extended temperature environments that characterize high-voltage applications.
source: http://www.powerpulse.net/story.php?storyID=32266
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