ON Semiconductor has expanded its portfolio of power MOSFETs with new, high efficiency single n-channel devices targeted at data networking, telecommunications and industrial applications. These devices are capable of delivering incredibly low on state resistance, RDS(on) values, thereby minimizing conduction losses and improving overall operational efficiency levels. They also have very low gate capacitance (Ciss), down to 2164pF, which ensures driver losses are kept as low as possible.
With a rated breakdown voltage of 40V, the company’s new NTMFS5C404NLT, NTMFS5C410NLT and NTMFS5C442NLT MOSFETs have maximum RDS(on) values (at Vgs = 10 V) of 0.74 milliohms, 0.9 milliohms and 2.8 milliohms” respectively, with continuous drain currents of 352A, 315A and 127A respectively. These are complemented by the NTMFS5C604NL, NTMFS5C612NL and NTMFS5C646NL, all of which have breakdown voltage ratings of 60 V. The maximum RDS(on) of these devices is 1.2 milliohms, 1.5 milliohms and 4.7 milliohms, respectively, while their associated continuous drain currents are 287A, 235A and 93A. Both the 40V and 60V devices are rated to operate at junction temperatures up to 175 degrees C, thereby giving engineers greater thermal headroom for their designs. ON Semiconductor will be expanding this offering with devices which feature additional RDS(on) values and different packages, such as micro8FL, DPAK and TO220.
The NTMFS5C404NL, NTMFS5C410NL, NTMFS5C442NL, NTMFS5C604NL, NTMFS5C612NL and NTMFS5C646NL are all offered in compact, RoHS-complaint SO8FL (DFN-8) packages with pricing starting at $0.42 per unit in 10,000 unit quantities.
source: http://www.powerpulse.net/story.php?storyID=32255
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