Toshiba Electronics Europe (TEE) has extended its family of silicon carbide (SiC) devices with the launch of a high-efficiency 3300V, 1500A power module. The MG1500FXF1US71 PMI (plastic case module IEGT) integrates an N-channel IEGT (injection-enhanced gate transistor) and an SiC fast recovery diode (FRD) into a package with a footprint of just 140mm x 190mm. Toshiba’s new module will save energy, space and weight and reduce acoustic noise in high-power switching inverter and motor control designs. Target applications include rail traction, industrial motor control, renewable energy systems and electricity transmission and distribution.
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Use of an SiC Schottky barrier diode (SBD) significantly decreases reverse recovery current – and leads to a corresponding decrease in turn-on loss – compared to silicon alternatives. A combination of diode and an improved internal package design to reduce stray inductances allows the MG1500FXF1US71 to operate with a reverse recovery loss up to 97% lower than a module that uses a conventional silicon diode.
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During development the 3300V, 1500A hybrid module was incorporated into a rail traction inverter design. By using the module the overall size of the motor control sub-assembly (including cooling system) was reduced by 40%. In addition, use of the module helped to reduce acoustic noise and improve ride quality.
source: http://www.powerpulse.net/story.php?storyID=31171
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