Freescale Semiconductor has introduced a low power RF power amplifier in its Airfast RF range adding mobile radio power levels to the 4W – 75W range.
This is a small form-factor rugged devcie with a greater than 65:1 VSWR survivability rating for continuous reliable operation in extreme environments.
Designated the AFT05MS004N, the device is characterised at frequencies from 136 to 941MHz and can operate as low as 2MHz. It is available in a SOT-89 plastic package.
The Airfast AFT05MS004N device is sampling now and is expected to be in production in Q3 2014.
Freescale Semiconductor’s Airfast family is comprised of 28V discrete, single-stage power amplifiers. The family now includes the 48V LDMOS parts which are claimed to achieve 50% efficiency in a Doherty configuration.
Two-stage amplifiers are available, incorporating multiple gain stages in a single package.
The second-generation Airfast products include:
A2T07H310-24S – 300W asymmetrical Doherty transistor for wireless infrastructure applications in the 720-960 MHz frequency band. In a Doherty configuration, this device breaks the 50 percent efficiency barrier at 8 dB back-off with 55 dBm peak power and 18.9 dB gain in a NI-1230S-4L2L package.
A2T07D160W04S – 160W dual-path transistor for wireless infrastructure applications in the 728-960 MHz frequency band. In Doherty configuration, this device has 51 percent efficiency at 7 dB output back-off with 52.5 dBm peak power and over 21.5 dB of gain in a NI-780S-4L package.
A2T26H160-24S – 160W RF asymmetrical Doherty transistor for wireless infrastructure applications in the 2496-2690 MHz frequency band. In a Doherty configuration, this device has 47 percent efficiency at 8 dB back-off with 52.5 dBm peak power and 15.7 dB gain in a NI-780S-4L2L package.
A2I25D012N – 12W RF integrated circuit for wireless infrastructure applications in the 2300-2690 MHz frequency band. In Doherty configuration, this device has 41 percent efficiency at 8 dB output back-off with 43.5 dBm peak power and 29 dB gain in a new TO-270WB-15 plastic package.
A2I22D050N – 50W RF integrated circuit for wireless infrastructure applications in the 2000-2200 MHz frequency band. In Doherty configuration, this device has 42 percent efficiency at 8 dB output back-off with 49 dBm peak power and 28 dB gain in a new TO-270WB-15 plastic package.
Comments are closed.
