Efficient Power Conversion Corporation (EPC) announces the EPC2105, 80 V enhancement-mode monolithic GaN transistor half-bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2105 is designed for high-frequency dc-dc conversion and enables efficient single-stage conversion from 48V directly to 1V system loads.
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Each device within the EPC2105 half-bridge component has a voltage rating of 80V. The upper FET has a typical RDS(on) of 10 mΩ, and the lower FET has a typical RDS(on) of 2.3 mΩ. The high-side FET is approximately one-fourth the size of the low-side device to optimize efficient dc-dc conversion in buck converters with a high Vin/Vout ratio. The EPC2105 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density.
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