Diodes Inc. has introduced the world’s smallest 60 V N-channel power MOSFET with a sub-100 mΩ on-resistance. With a footprint measuring 1.6 mm x 1.6 mm and a typical height of 0.5 mm, the DFN1616-packaged DMN6070SFCL helps achieve higher power densities in space-critical products, including cellphones, ultra-thin LCD TVs and hand-held gaming controls.
With its very low on-resistance of only 74 mΩ typical at a VGS of 4V, the MOSFET also helps to minimize conduction losses and raise overall power efficiency. The DMN6070SFCL handles a continuous current of 2 A and supports a pulsed current of 10 A, enabling it to cope well with DC-DC conversion spikes.
The miniature MOSFET is just one of a series of 60 V N- and P-channel devices announced by Diodes Incorporated to meet the needs of load switch, DC-DC conversion and signal switching duties. Four larger package options are also offered: SO8, SOT23, SOT223 and TO252, suiting a wide range of applications including consumer electronics, industrial controls and HVAC equipment.
The DFN1616-packaged DMN6070SFCL 60V N-channel MOSFET is priced at $0.15 USD each in 10k quantities.
source: http://powerelectronics.com/discrete-power-semis/smallest-60-v-power-mosfet-boosts-power-density
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