Tag: battery industry

Eaton Corp. today announced the launch of its automotive grade Coiltronics® HCMA Series of high-current power inductors to meet and exceed the Automotive Electronics Council’s (AEC) Q200 Grade 3 standard with a maximum total temperature operation range from minus 55 to 125 degrees C. The HCMA Series is provided in surface mount packaging with a range of compact heights beginning

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Efficient Power Conversion Corporation (EPC) announces the introduction of two eGaN FETs that raise the bar for power conversion performance. These products have a maximum operating temperature of 150 degrees C and pulsed currents capabilities of 260A (150 V EPC2033) and 140A (EPC2034). Applications include dc-dc converters, synchronous rectification in dc-dc and ac-dc converters, motor drives, LED lighting, and industrial

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Renesas Electronics today announced the RL78/G1F Group of multi-function microcontrollers (MCUs), adding 20 new members to its low-power RL78 Family of MCUs. Featuring enhanced peripheral functions and compatibility across the RL78/G1x Series of MCUs, the new devices simplify sensor-less brushless dc motor (BLDC motor) control and deliver precision operation at faster rotational speeds with high accuracy for energy-efficient home appliances

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Eaton Corp. announced the introduction of its eATS30 Monitored platform for data centers in North and South America. Designed to switch non-phase alternating current (AC) power sources in the event of a power failure, Eaton’s latest rack automatic transfer switch (ATS) is designed to allow for consistently resilient uptime for equipment with a single power supply. Eaton’s newest offering is

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Linear Technology Corporationintroduces the LTM4630-1, a dual 18A or single 36A µModule® (micromodule) regulator with high precision output voltage regulation for 28nm and sub-28nm FPGAs, ASICs and microprocessors. The core voltage of these advanced digital devices requires very accurate voltage regulation at steady state (dc) and at fast load current transients. The LTM4630-1 provides precision output voltage regulation for both

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Texas Instruments (TI) today introduced the first power management chipset with intelligent digital control and a unique body-diode sensing feature to optimize secondary-side synchronous rectification in next-generation ac-dc and isolated dc-dc power supplies. The UCD3138A digital controller and UCD7138 low-side gate driver improve system efficiency and cut synchronous rectification MOSFET voltage stress in half compared to other digital-power solutions. Recommended:

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Efficient Power Conversion Corporation (EPC) announces the introduction of three eGaN FETs designed with a wider pitch connection layout. These products expand EPC’s family of “Relaxed Pitch” devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm

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Analog Devices, Inc. (ADI) today introduced an absorptive single-pole, double-throw (SPDT) switch specified for the 9-KHz to 13-GHz frequency band, with high isolation of 48 dB and low insertion-loss of 0.6 dB at 8-GHz operation. The HMC1118LP3DE is the first offering within ADI’s new RF and microwave control product portfolio to exhibit the inherent advantages of silicon process technology, which

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AllCell Technologies, LLC and LG Chem Ltd have developed a high performance long lasting Li-ion battery for material handling applications. The battery is designed as a drop-in replacement for lead-acid batteries with fast charge/discharge capabilities, 4-5 times longer life, robust fuel gage, hot environment resilience, and no standard maintenance requirements. A base model (26V, 93 Ah) with CAN bus communication

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Toshiba Electronics Europe has introduced a new four-pin TO-247 MOSFET package targeting power factor control for high power Smart Power Stage (SPS). The new package is equipped with high speed DTMOS-H chips with low QGD to optimize switching behavior. In conventional three pin TO-247 packages, parasitic induction at the source pin causes increased losses with increasing switching frequency. With the

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