Tag: new energy news

22
May

60A 600V Enhancement Mode GaN Switch

GaN Systems Inc. has launched the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors based on its three core proprietary technologies. The new GaN high-power enhancement-mode device, designated the GS65516T, boasts the highest current capability on the market at 60A and further expands GaN Systems’ range of power switching semiconductors. Recommended: Digital Controller Looks toward Software-Defined

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22
May

Gate Drive Transformers Increase Isolation to 4250Vrms

Pulse Electronics Corporation has expanded its P0584/85NL high-isolation gate drive transformer line with a new series that uses insulation wire on all windings, making them compliant to safety standards such as IEC61558 and IEC60601 for reinforced isolation. The P0584/85NL series provides isolation in MOSFET and IGBT drivers in industrial applications such as motor drive circuits and solar inverters and for

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22
May

Digital Isolator for IGBT Gate Drive for Motor Applications

Analog Devices, Inc. (ADI) today introduced the ADuM4135 isolated IGBT gate driver to improve electric motor energy efficiency, reliability and system-control performance in industrial motor control applications. Incorporating ADI’s award-winning iCoupler® digital isolator technology, the ADuM4135 ensures safety and reliability through proven galvanic isolation in a single package while delivering the industry’s best combination of CMTI (common-mode transient immunity) at

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22
May

NFC Interface Tag IC Incorporates Energy Harvesting

ams AG today launched the AS3955, an NFC interface chip (NFiC™) which offers unique energy harvesting and data transfer capabilities. Like its predecessor the AS3953, the AS3955 provides a contactless bridge between an NFC reader (for instance, a smartphone or tablet) and any microcontroller. But the AS3955 can also act as a power supply for the host device, harvesting as

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22
May

Toshiba Launches 4500V 1200A IEGT Module

Toshiba Semiconductor has launched a high – current 4500V, 1200A power module for use in rail traction, industrial motor control, renewable energy systems and electricity transmission and distribution applications. The MG1200GXH1US61 PMI (plastic case module IEGT) integrates an N-channel IEGT (injection-enhanced gate transistor) and a fast recovery diode (FRD) into a standard package with a footprint of just 140mm x

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22
May

Power Modules with PressFit-Pins and Phase Change Material

IXYS Corporation has introduced a new family of power modules, series E2 and E3, with PressFit-Pins (PFP) connector technology. The E2/E3 family represents a compact power platform with the standard 17mm height that provides optimal high power density and excellent thermal conductivity. The new design for the E2/E3 with PressFit-Pins gives highest reliability for the application. It allows the designer

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22
May

Power Supplies Operate from 80 to 370-Vdc or 85 to 265-Vac

TDK Corporation announces the successful development of the HMS series of compact unit type power supplies including four models rated for 50 W, 80 W, 100 W, and 150 W, to meet a wide range of customer needs. TDK-Lambda Corporation will start accepting orders for the new products from June, and mass production will begin in July 2015. Recommended: 1kVA

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20
May

DC-DC Converter Targets PoE Applications

GE‘s CP2500DC45PE-F compact power line dc-dc converter with front input connector features an input current of 40 to 72 Amps and programmable output voltage range from 44 to 58 Volts, providing high-density Power over Ethernet (POE)-compliant power in a minimal form factor. Part of the company’s recently launched rectifier portfolio, the new converter has been specifically designed to operate as

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20
May

Ultrasoft Ultrafast Diodes Reduce Conduction Losses

Vishay Intertechnology, Inc. today introduced 28 new 600V and 650V FRED Pt® Gen 4 Ultrafast recovery diodes optimized for high-frequency converters in power modules, motor drives, UPS, solar inverters, and welding machine inverters. Offered as die in wafer form, Vishay Semiconductors “H” and “U” series devices offer ultra-low forward voltage and reverse recovery charge to reduce losses and increase efficiency,

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20
May

Co-Packaged SiC Transistor and Diodes in Mini-Modules

GeneSiC Semiconductor announces the immediate availability of a 20-mΩ 1200-V SiC junction transistor and diodes in an isolated, 4-leaded mini-module packaging that enables extremely low Turn-On energies losses while offering flexible, modular designs in high frequency power converters. The use of high frequency, high voltage and low on-resistance capable SiC transistors and rectifiers will reduce the size/weight/volume of electronics applications

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