Vishay Intertechnology, Inc. today introduced its new trench IGBT platform featuring Punch Through (PT) and Field Stop (FS) technologies. Designed to increase efficiency in motor drives, UPS, solar inverters, and welding machine inverters, the Vishay Semiconductors devices, provided as bare die, offer low collector-to-emitter voltages and fast and soft turn-on and turn-off for low conduction and switching losses while providing breakdown voltages to 650 V for increased reliability. Available in various die sizes with collector current ratings from 30 A to 240 A and breakdown voltages of 600 V and 650 V, the IGBT chips released today include Trench PT and FS devices, each available as sawn or unsawn die.
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Offering low conduction losses, the Trench PT devices feature a negative temperature coefficient for low collector-to-emitter voltages down to 1.07 V at 50% rated current and 1.34 V at full rated current and +125 degrees C. With their Trench construction, the IGBTs offer a smaller size than planar devices, providing higher current density and lower thermal resistance, without compromising performance and reliability. The Trench PT IGBTs are optimized for low switching frequencies to 1 kHz.
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The devices are optimized for use in power modules and can be combined with Vishay’s new FRED Pt® Gen4 Ultrafast soft diodes, where they will offer exceptionally low EMI, a maximum operating temperature of +175 degrees C, and plug-and-play reliability for single- and three-phase inverters, power factor correction (PFC) circuits, and full- and half-bridge dc-dc converters. Samples of the above released IGBT and freewheeling diode parts can be ordered now for customer evaluation and qualification. Production ramp-up will take place in 2015. Lead times are six to eight weeks for large orders.
source: http://www.powerpulse.net/story.php?storyID=31263
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