Toyoda Gosei Co., Ltd. has developed low-loss semiconductor device technologies for high power application such as rectifiers and switching transistors. These technologies use gallium-nitride (GaN), a key material in blue LEDs that also has the superior characteristic of being able to withstand high voltages. Application of the new technology to devices such as the power control units used in hybrid vehicles and power converters used in solar power systems is promising for the development of smaller and more efficient devices. Toyoda Gosei will be exhibiting vertical GaN power FETs, vertical GaN Schottky diodes and a dc-dc converter incorporating GaN devices. The company is currently working with key customers on near-term commercialization of these new GaN devices.
Recommended: Digital Controller Looks toward Software-Defined Power
Toyoda Gosei began researching gallium nitride semiconductor power device technologies in 2010, using the liquid crystal growth technology it has cultivated since 1986 in the development and production of blue LEDs. The company has now developed a low loss metal-oxide-semiconductor field effect transistor (MOFSET) that allows current flow only when a signal is given to switch (gate). Otherwise no current flows even under high voltage of 1200V.
Comments are closed.
