Efficient Power Conversion Corporation (EPC) announces the introduction of three eGaN FETs designed with a wider pitch connection layout. These products expand EPC’s family of “Relaxed Pitch” devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.
Recommended: Cree Announces IPO Plans for Power and RF Business
New eGaN® power transistors extend EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines . Parts in the new series include: EPC2030 rated for 40V, with an on-resistance of 1.8 mOhm, Qg of 18 nC, and a pulsed current rating of 495 A, priced at $3.46 in lots of 1,000 units; EPC2031 rated for 60V, with an on-resistance of 2.0 mOhm, Qg of 17 nC, a pulsed current rating of 450A, priced at $3.48 in lots of 1,000 units; and the EPC2032, rated for 100V, with an on resistance of 3.0mOhm, Qg of 14nC, a pulsed current rating of 300A, priced at $3.52 in lots of 1,000 units.
Comments are closed.
