Dual 1.5A MOSFET Gate Drivers now in DFN Package

IXYS Integrated Circuits Division (ICD), Inc., a wholly owned subsidiary of IXYS Corporation announced the immediate availability of the IX4426, IX4427 and IX4428 MOSFET gate drivers in a small 3×3 DFN package. The outputs of the IX4426/7/8M are capable of sourcing and sinking 1.5A, and can switch a 1000pF load in less than 10ns. For higher current requirements, the two outputs can be paralleled for a total of 3A peak sourcing and sinking current. The IX4426/7/8M devices have a wide operating voltage range of 4.5V to 35V, which is much higher than competitive parts. The inputs are TTL and CMOS compatible and are virtually immune to latch-up. The IX4426/7/8M are specified with an extended operating temperature range of -40 degrees C to +125 degrees C.

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The IX4426/7/8M are available in a 3mm x 3mm DFN package. Compared to an 8-lead SOIC package, the 3mm x 3mm DFN package has almost twice the power dissipation capability while needing only 20% of the PCB area. The IX4426M is configured as a dual inverting driver, the IX4427M is configured as a dual non-inverting driver, and the IX4428M is configured with one inverting and one non-inverting driver.

“We extended the operating temperature range and the voltage operating range to accommodate the needs of our worldwide customers. The 35V operating capability differentiate our drivers from the competition and make them suitable to drive even the new Silicon Carbide (SiC), MOSFETs and JFETs, as well as the high performance IGBTs and power MOSFETs,” commented Mark Heisig, General Manager of IXYS ICD.

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These low cost devices are well suited for driving power MOSFETs, IGBTs and SiC devices in high power switched mode power supply applications, motor controls, and dc-dc converters. IXYS ICD also offers dual 4A gate drivers (IXD_604D2 series) and 9A gate drivers (IXD_609D2 series) in DFN packages.

source: http://www.powerpulse.net/story.php?storyID=31421

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